NSBC123JDXV6T1G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SOT563
$0.10
Available to order
Reference Price (USD)
1+
$0.10494
500+
$0.1038906
1000+
$0.1028412
1500+
$0.1017918
2000+
$0.1007424
2500+
$0.099693
Exquisite packaging
Discount
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Select onsemi's NSBC123JDXV6T1G for superior Pre-Biased Transistor Array performance in demanding electronic environments. These BJT arrays deliver time-saving solutions with their integrated resistor networks and matched transistor characteristics. Ideal for audio amplifiers, level shifters, and digital logic interfaces in commercial and industrial equipment. Performance highlights include wide operating voltage ranges, excellent linearity, and resistance to thermal runaway. As a trusted semiconductor supplier, onsemi offers flexible packaging options and reliable delivery schedules. Whether you need samples or production quantities, begin by submitting your NSBC123JDXV6T1G inquiry our team awaits your requirements!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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