NSBC143EDXV6T1G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SOT563
$0.11
Available to order
Reference Price (USD)
1+
$0.11000
500+
$0.1089
1000+
$0.1078
1500+
$0.1067
2000+
$0.1056
2500+
$0.1045
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi's NSBC143EDXV6T1G represents the next generation of Pre-Biased Bipolar Transistor Arrays, combining efficiency with compact design. These surface-mount compatible components feature integrated bias networks that reduce part count while improving system reliability. Ideal applications encompass power management, sensor interfaces, and digital circuit amplification in medical equipment, robotics, and smart home systems. Notable advantages include consistent hFE matching, reduced board space requirements, and simplified inventory management. As a leading supplier of discrete semiconductors, onsemi guarantees quality and performance. Get competitive quotes and lead times inquire about NSBC143EDXV6T1G now!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Toshiba Semiconductor and Storage
RN2908FE(TE85L,F)
Rohm Semiconductor
EMB75T2R
Diodes Incorporated
DDA143TU-7
Diodes Incorporated
ADC114YUQ-13
Toshiba Semiconductor and Storage
RN2969(TE85L,F)
Nexperia USA Inc.
NHUMB10F
Micro Commercial Co
UMH11N-TP
Toshiba Semiconductor and Storage
RN4901,LF(CT
onsemi
EMC4DXV5T1G
onsemi