NSS60101DMR6T1G
onsemi
onsemi
NSS60101DMR6T1G - 60 V, 1 A, LOW
$0.15
Available to order
Reference Price (USD)
1+
$0.14934
500+
$0.1478466
1000+
$0.1463532
1500+
$0.1448598
2000+
$0.1433664
2500+
$0.141873
Exquisite packaging
Discount
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The NSS60101DMR6T1G Bipolar Junction Transistor Arrays from onsemi are built for high-efficiency and long-lasting operation. Key benefits include matched transistor pairs, low distortion, and wide operating temperature range, ideal for RF and power amplification. Commonly found in broadcasting equipment, instrumentation, and security systems. Interested in learning more? Submit an inquiry and our experts will guide you through the selection process!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
- Power - Max: 400mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SC-74
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