NSV60601MZ4T1G
onsemi
onsemi
TRANS NPN 60V 6A SOT223
$0.63
Available to order
Reference Price (USD)
1,000+
$0.20295
2,000+
$0.18505
5,000+
$0.17311
10,000+
$0.16117
25,000+
$0.15918
Exquisite packaging
Discount
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Optimize your designs with NSV60601MZ4T1G by onsemi, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, NSV60601MZ4T1G is the perfect fit. Contact us today to learn more and place your order with onsemi.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
- Power - Max: 800 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223 (TO-261)
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