NSVB114YPDXV6T1G
onsemi
onsemi
TRANS BRT 50V 100MA SOT563
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Enhance your circuit designs with onsemi's NSVB114YPDXV6T1G Pre-Biased BJT Arrays the perfect solution for space-constrained applications. These discrete semiconductor products deliver optimized performance with built-in bias resistors, simplifying your PCB layout while ensuring stable operation. Key features include high current gain, low leakage current, and excellent temperature characteristics. Widely used in LED drivers, interface circuits, and logic level conversion across telecom, automation, and IoT devices. Trust onsemi's expertise in transistor technology for your next project. Ready to order or need technical support? Send us your inquiry today!
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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