NSVB124XPDXV6T1G
onsemi
onsemi
TRANS PREBIAS NPN/PNP SOT563
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onsemi presents the NSVB124XPDXV6T1G series innovative Pre-Biased BJT Arrays redefining compact circuit solutions. These transistor arrays feature carefully matched parameters and integrated biasing for plug-and-play functionality in diverse applications. Typical uses include interface circuits between different logic families, LED matrix control, and power management in IoT devices. Engineering advantages comprise low noise operation, high current capability, and excellent batch-to-batch consistency. With onsemi's global supply chain support, you'll never face stock shortages. Get detailed product information and volume discounts send your NSVB124XPDXV6T1G inquiry today and our experts will assist you!
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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