NSVBC114YPDXV6T1G
onsemi
onsemi
TRANS PREBIAS NPN/PNP 50V SOT563
$0.41
Available to order
Reference Price (USD)
4,000+
$0.11435
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents the NSVBC114YPDXV6T1G series innovative Pre-Biased BJT Arrays redefining compact circuit solutions. These transistor arrays feature carefully matched parameters and integrated biasing for plug-and-play functionality in diverse applications. Typical uses include interface circuits between different logic families, LED matrix control, and power management in IoT devices. Engineering advantages comprise low noise operation, high current capability, and excellent batch-to-batch consistency. With onsemi's global supply chain support, you'll never face stock shortages. Get detailed product information and volume discounts send your NSVBC114YPDXV6T1G inquiry today and our experts will assist you!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Toshiba Semiconductor and Storage
RN2963(TE85L,F)
Nexperia USA Inc.
NHUMH10X
Toshiba Semiconductor and Storage
RN4907,LF
Rohm Semiconductor
UMD3NFHATR
Toshiba Semiconductor and Storage
RN2708JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2601(TE85L,F)
Nexperia USA Inc.
PUMD6,125
Toshiba Semiconductor and Storage
RN4988(TE85L,F)
Nexperia USA Inc.
PEMD10,115
Nexperia USA Inc.