NSVBC143TPDXV6T1G
onsemi
onsemi
TRANS PREBIAS NPN/PNP 50V SOT563
$0.12
Available to order
Reference Price (USD)
4,000+
$0.11435
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents the NSVBC143TPDXV6T1G series innovative Pre-Biased BJT Arrays redefining compact circuit solutions. These transistor arrays feature carefully matched parameters and integrated biasing for plug-and-play functionality in diverse applications. Typical uses include interface circuits between different logic families, LED matrix control, and power management in IoT devices. Engineering advantages comprise low noise operation, high current capability, and excellent batch-to-batch consistency. With onsemi's global supply chain support, you'll never face stock shortages. Get detailed product information and volume discounts send your NSVBC143TPDXV6T1G inquiry today and our experts will assist you!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Toshiba Semiconductor and Storage
RN4987,LXHF(CT
onsemi
EMG2DXV5T5
Toshiba Semiconductor and Storage
RN4981FE,LXHF(CT
Rohm Semiconductor
IMH9AT110
Diodes Incorporated
ACX124EUQ-7R
Rohm Semiconductor
EMA3T2R
NXP USA Inc.
PQMD12Z
Panasonic Electronic Components
XN0411600L
Infineon Technologies
BCR10PNH6730
Toshiba Semiconductor and Storage