NSVEMD4DXV6T5G
onsemi
onsemi
TRANS NPN/PNP DUAL BRT SOT563
$0.11
Available to order
Reference Price (USD)
8,000+
$0.10742
Exquisite packaging
Discount
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Maximize circuit reliability with onsemi's NSVEMD4DXV6T5G Pre-Biased Transistor Arrays, the smart choice for modern electronic designs. These BJT arrays combine multiple transistors with bias networks in single packages, offering space savings and improved thermal characteristics. Target applications span from portable electronics to industrial automation systems, particularly where stable amplification and fast switching are required. Key benefits include reduced component count, simplified assembly processes, and enhanced signal integrity. onsemi maintains strict quality control measures for all discrete semiconductor products. Interested in NSVEMD4DXV6T5G specifications or evaluation boards? Complete our brief inquiry form for prompt response!
Specifications
- Product Status: Last Time Buy
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms, 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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