NSVMMUN2112LT1G
onsemi
onsemi
TRANS PREBIAS PNP 0.246W SOT23
$0.39
Available to order
Reference Price (USD)
3,000+
$0.06930
6,000+
$0.06237
15,000+
$0.05544
30,000+
$0.05198
75,000+
$0.04620
Exquisite packaging
Discount
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The NSVMMUN2112LT1G by onsemi is a trusted name in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are built to meet the highest industry standards, offering reliability and efficiency. Key features include high power dissipation, stable operation, and easy integration. Widely used in computing, aerospace, and defense applications. onsemi ensures top-tier performance and support. Contact us now to discuss your requirements!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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