NTBGS002N06C
onsemi
onsemi
POWER MOSFET, 60 V, 2.2 M?, 211
$9.85
Available to order
Reference Price (USD)
1+
$9.85000
500+
$9.7515
1000+
$9.653
1500+
$9.5545
2000+
$9.456
2500+
$9.3575
Exquisite packaging
Discount
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Discover NTBGS002N06C, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V
- Vgs(th) (Max) @ Id: 4V @ 225µA
- Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 178W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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