NTD3813N-1G
onsemi
onsemi
MOSFET N-CH 16V 9.6A/51A IPAK
$0.20
Available to order
Reference Price (USD)
1+
$0.20000
500+
$0.198
1000+
$0.196
1500+
$0.194
2000+
$0.192
2500+
$0.19
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with NTD3813N-1G, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NTD3813N-1G provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 963 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
IXYS
IXTA150N15X4
Toshiba Semiconductor and Storage
TK155U65Z,RQ
Rectron USA
RM30N100T2
onsemi
NTD4979N-35G
Wolfspeed, Inc.
C3M0075120J-TR
Infineon Technologies
IRFL014NTRPBF
Nexperia USA Inc.
PH2925U,115
onsemi
NTMS4816NR2G
Taiwan Semiconductor Corporation
TSM120N06LCR RLG
Fairchild Semiconductor