NTD4806N-35G
onsemi
onsemi
MOSFET N-CH 30V 11.3A/79A IPAK
$0.25
Available to order
Reference Price (USD)
1+
$0.25000
500+
$0.2475
1000+
$0.245
1500+
$0.2425
2000+
$0.24
2500+
$0.2375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover NTD4806N-35G, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
Infineon Technologies
BSZ039N06NSATMA1
Renesas Electronics America Inc
2SK3115-AZ
Infineon Technologies
SPW16N50C3FKSA1
STMicroelectronics
STB30NF10T4
STMicroelectronics
STD3NK50ZT4
Fairchild Semiconductor
FDD26AN06A0
Vishay Siliconix
IRF830ASPBF
Infineon Technologies
IPW60R145CFD7XKSA1
Renesas Electronics America Inc
2SK3116B-ZK-E1-AY
onsemi