Shopping cart

Subtotal: $0.00

NTE110A

NTE Electronics, Inc
NTE110A Preview
NTE Electronics, Inc
D-GE-GEN PURP 40 PRV
$1.09
Available to order
Reference Price (USD)
1+
$1.09000
500+
$1.0791
1000+
$1.0682
1500+
$1.0573
2000+
$1.0464
2500+
$1.0355
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 150mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 65 µA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AA, DO-7, Axial
  • Supplier Device Package: DO-7
  • Operating Temperature - Junction: -65°C ~ 85°C

Related Products

NTE Electronics, Inc

1N62

Vishay General Semiconductor - Diodes Division

SS1H9-E3/61T

Global Power Technology-GPT

G3S065100P

Yangzhou Yangjie Electronic Technology Co.,Ltd

SS210A-F1-0000HF

Nexperia USA Inc.

1PS79SB40,115

Vishay General Semiconductor - Diodes Division

1N5817-E3/73

Panjit International Inc.

MBR3150_R2_00001

Vishay General Semiconductor - Diodes Division

FESB16BTHE3_A/P

Vishay General Semiconductor - Diodes Division

VS-35EPF06LHM3

Top