NTE2018
NTE Electronics, Inc
NTE Electronics, Inc
IC-8 CHAN CMOS/TTL DR 18-PIN DIP
$3.81
Available to order
Reference Price (USD)
1+
$3.81000
500+
$3.7719
1000+
$3.7338
1500+
$3.6957
2000+
$3.6576
2500+
$3.6195
Exquisite packaging
Discount
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Maximize efficiency with NTE Electronics, Inc's NTE2018 BJT Arrays, engineered for precision and reliability. These arrays boast low power consumption, high current capacity, and excellent thermal characteristics, making them a top choice for power supply and signal processing circuits. Ideal for telecommunications, robotics, and IoT devices. Don't miss out reach out to our sales team for more details and special offers!
Specifications
- Product Status: Active
- Transistor Type: 8 NPN Darlington
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 350mA, 500A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 18-DIP (0.300", 7.62mm)
- Supplier Device Package: 18-PDIP
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