NTE275
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP DARL 80V 4A TO66
$5.40
Available to order
Reference Price (USD)
1+
$5.40000
500+
$5.346
1000+
$5.292
1500+
$5.238
2000+
$5.184
2500+
$5.13
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience superior performance with NTE275 from NTE Electronics, Inc, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, NTE275 is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
- Power - Max: 50 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
Related Products
onsemi
2SC5569-TD-E
Nexperia USA Inc.
PBSS5140T,215
onsemi
MJF6668G
Microchip Technology
2N4150S
onsemi
2SD1060S-1E
Fairchild Semiconductor
FJP3305TU
NTE Electronics, Inc
NTE2517
Microchip Technology
2N3719
Nexperia USA Inc.
BC817K-40HVL
Nexperia USA Inc.