NTE2922
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CHANNEL 400V 16A TO3P
$10.88
Available to order
Reference Price (USD)
1+
$10.88000
500+
$10.7712
1000+
$10.6624
1500+
$10.5536
2000+
$10.4448
2500+
$10.336
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NTE Electronics, Inc presents NTE2922, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NTE2922 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 300mOhm @ 8.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
onsemi
FDA69N25
Diodes Incorporated
DMG2305UXQ-7
IXYS
IXTH62N65X2
Rohm Semiconductor
RUL035N02TR
Fairchild Semiconductor
FQE10N20CTU
Vishay Siliconix
IRLL014TRPBF
NXP USA Inc.
PMF780SN,115
Diodes Incorporated
DMN2300UFB-7B
EPC
EPC2021
STMicroelectronics