NTE319
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 20V TO72
$1.60
Available to order
Reference Price (USD)
1+
$1.60000
500+
$1.584
1000+
$1.568
1500+
$1.552
2000+
$1.536
2500+
$1.52
Exquisite packaging
Discount
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Upgrade your RF designs with NTE Electronics, Inc's NTE319 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how NTE319 can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 2.7dB @ 45MHz
- Gain: 29dB
- Power - Max: 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
- Current - Collector (Ic) (Max): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
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