NTMFS0D8N02P1ET1G
onsemi
onsemi
MOSFET N-CH 25V 55A/365A 5DFN
$1.97
Available to order
Reference Price (USD)
1+
$1.96627
500+
$1.9466073
1000+
$1.9269446
1500+
$1.9072819
2000+
$1.8876192
2500+
$1.8679565
Exquisite packaging
Discount
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Experience the power of NTMFS0D8N02P1ET1G, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NTMFS0D8N02P1ET1G is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 365A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.68mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id: 2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 4.5 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 13 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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