NTMJS1D4N06CLTWG
onsemi
onsemi
MOSFET N-CH 60V 39A/262A 8LFPAK
$9.50
Available to order
Reference Price (USD)
1+
$9.50000
500+
$9.405
1000+
$9.31
1500+
$9.215
2000+
$9.12
2500+
$9.025
Exquisite packaging
Discount
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NTMJS1D4N06CLTWG by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NTMJS1D4N06CLTWG ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 180W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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