NTMS4706NR2G
onsemi
onsemi
MOSFET N-CH 30V 6.4A 8SOIC
$0.22
Available to order
Reference Price (USD)
2,500+
$0.29488
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance NTMS4706NR2G from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NTMS4706NR2G delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 10.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 24 V
- FET Feature: -
- Power Dissipation (Max): 830mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SIHK105N60EF-T1GE3
STMicroelectronics
STP80NF12
Rohm Semiconductor
R6004JNJGTL
onsemi
FDN357N
Toshiba Semiconductor and Storage
TK7P65W,RQ
Alpha & Omega Semiconductor Inc.
AON1634
Infineon Technologies
BSC0902NSATMA1
IXYS
IXFP24N60X
onsemi
NTMFS08N003C
IXYS