NTMTSC1D5N08MC
onsemi
onsemi
MOSFET N-CH 80V 33A/287A 8DFNW
$4.11
Available to order
Reference Price (USD)
1+
$4.10509
500+
$4.0640391
1000+
$4.0229882
1500+
$3.9819373
2000+
$3.9408864
2500+
$3.8998355
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTMTSC1D5N08MC by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTMTSC1D5N08MC inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 650µA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-TDFNW (8.3x8.4)
- Package / Case: 8-PowerTDFN
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