NTNS3A65PZT5G
onsemi
onsemi
MOSFET P-CH 20V 281MA SOT883
$0.07
Available to order
Reference Price (USD)
8,000+
$0.09350
16,000+
$0.08525
24,000+
$0.07975
56,000+
$0.07150
Exquisite packaging
Discount
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onsemi presents NTNS3A65PZT5G, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NTNS3A65PZT5G delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 281mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.3Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 155mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
- Package / Case: 3-XFDFN
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