NVD5C668NLT4G
onsemi
onsemi
MOSFET N-CHANNEL 60V 49A DPAK
$2.08
Available to order
Reference Price (USD)
2,500+
$0.41518
5,000+
$0.39442
12,500+
$0.37960
25,000+
$0.37744
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVD5C668NLT4G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVD5C668NLT4G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 44W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NVMFS5C460NLWFAFT1G
Panjit International Inc.
PJQ5458A_R2_00001
Infineon Technologies
BSC034N06NSATMA1
Microchip Technology
APT106N60LC6
onsemi
NTLGF3501NT1G
Infineon Technologies
IPB45P03P4L11ATMA1
Toshiba Semiconductor and Storage
TK12A60D(STA4,Q,M)
Wolfspeed, Inc.
C3M0350120J
onsemi
NTTFS4C10NTAG
onsemi