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NVH4L015N065SC1

onsemi
NVH4L015N065SC1 Preview
onsemi
SIC MOS TO247-4L 650V
$18.58
Available to order
Reference Price (USD)
1+
$18.57844
500+
$18.3926556
1000+
$18.2068712
1500+
$18.0210868
2000+
$17.8353024
2500+
$17.649518
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
  • Vgs(th) (Max) @ Id: 4.3V @ 25mA
  • Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
  • Vgs (Max): +22V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4

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