NVHL020N120SC1
onsemi
onsemi
SICFET N-CH 1200V 103A TO247-3
$47.83
Available to order
Reference Price (USD)
1+
$47.83000
500+
$47.3517
1000+
$46.8734
1500+
$46.3951
2000+
$45.9168
2500+
$45.4385
Exquisite packaging
Discount
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Upgrade your electronic designs with NVHL020N120SC1 by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NVHL020N120SC1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 535W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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