NVMFS6H824NWFT1G
onsemi
onsemi
MOSFET N-CH 80V 19A/103A 5DFN
$0.89
Available to order
Reference Price (USD)
1+
$0.89129
500+
$0.8823771
1000+
$0.8734642
1500+
$0.8645513
2000+
$0.8556384
2500+
$0.8467255
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover NVMFS6H824NWFT1G, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
Vishay Siliconix
IRF830APBF
onsemi
NTMFS4C024NT3G
onsemi
FDC634P
Nexperia USA Inc.
PMPB85ENEA/FX
Rectron USA
RM100N30DF
Toshiba Semiconductor and Storage
TK25N60X,S1F
onsemi
MTB30P06V
Alpha & Omega Semiconductor Inc.
AOWF125A60
Fairchild Semiconductor
FQU8N25TU
Infineon Technologies