NVMFWS016N06CT1G
onsemi
onsemi
MOSFET N-CH 60V 10A/33A 5DFN
$0.78
Available to order
Reference Price (USD)
1+
$0.77913
500+
$0.7713387
1000+
$0.7635474
1500+
$0.7557561
2000+
$0.7479648
2500+
$0.7401735
Exquisite packaging
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Experience the power of NVMFWS016N06CT1G, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NVMFWS016N06CT1G is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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