NVMYS1D2N04CLTWG
onsemi
onsemi
MOSFET N-CH 40V 44A/258A LFPAK4
$1.89
Available to order
Reference Price (USD)
1+
$1.88668
500+
$1.8678132
1000+
$1.8489464
1500+
$1.8300796
2000+
$1.8112128
2500+
$1.792346
Exquisite packaging
Discount
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onsemi presents NVMYS1D2N04CLTWG, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NVMYS1D2N04CLTWG delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 258A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 134W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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