NVMYS2D9N04CLTWG
onsemi
onsemi
MOSFET N-CH 40V 27A/110A LFPAK4
$1.05
Available to order
Reference Price (USD)
1+
$1.05108
500+
$1.0405692
1000+
$1.0300584
1500+
$1.0195476
2000+
$1.0090368
2500+
$0.998526
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover NVMYS2D9N04CLTWG, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
Related Products
Toshiba Semiconductor and Storage
TK100S04N1L,LQ
onsemi
NTD4858NA-35G
Toshiba Semiconductor and Storage
TK100A06N1,S4X
Toshiba Semiconductor and Storage
SSM3J328R,LF
Fairchild Semiconductor
HUF75631S3S
Panjit International Inc.
PJF8NA65A_T0_00001
Diodes Incorporated
DMN2991UT-7
onsemi
NVTFS6H880NTAG
onsemi
FDMS6673BZ
Vishay Siliconix