NX6008NBKR
Nexperia USA Inc.
Nexperia USA Inc.
NX6008NBK/SOT23/TO-236AB
$0.23
Available to order
Reference Price (USD)
1+
$0.23000
500+
$0.2277
1000+
$0.2254
1500+
$0.2231
2000+
$0.2208
2500+
$0.2185
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance NX6008NBKR from Nexperia USA Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NX6008NBKR delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 270mW (Ta), 1.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Vishay Siliconix
SQJ170ELP-T1_GE3
Infineon Technologies
BSP125H6327XTSA1
Infineon Technologies
BSC018NE2LSIATMA1
Infineon Technologies
IPA60R230P6XKSA1
Vishay Siliconix
SQM120P04-04L_GE3
Renesas Electronics America Inc
2SK1283-AZ
Alpha & Omega Semiconductor Inc.
AO4262E
Nexperia USA Inc.
PMV15UNEAR
Diodes Incorporated
ZXMP2120FFTA
onsemi