NX7002BKVL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 270MA TO236AB
$0.03
Available to order
Reference Price (USD)
10,000+
$0.02926
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NX7002BKVL by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NX7002BKVL inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 310mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Diodes Incorporated
DMN2011UTS-13
Diodes Incorporated
DMP2066LDMQ-7
IXYS
IXFX32N100P
Infineon Technologies
BSP135H6327XTSA1
Infineon Technologies
IPI50R250CP
STMicroelectronics
STW62NM60N
Vishay Siliconix
SIR836DP-T1-GE3
Toshiba Semiconductor and Storage
TK190A65Z,S4X
Panjit International Inc.
PJQ2405-AU_R1_000A1
IXYS