NXH020P120MNF1PTG
onsemi
onsemi
PIM F1 SIC HALFBRIDGE 1200V 20MO
$113.79
Available to order
Reference Price (USD)
1+
$113.79000
500+
$112.6521
1000+
$111.5142
1500+
$110.3763
2000+
$109.2384
2500+
$108.1005
Exquisite packaging
Discount
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Experience the next level of semiconductor technology with onsemi s NXH020P120MNF1PTG, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for NXH020P120MNF1PTG.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
- Power - Max: 119W (Tj)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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