NXH100B120H3Q0PTG
onsemi
onsemi
IGBT MODULE 1200V 50A 186W 22PIM
$76.73
Available to order
Reference Price (USD)
1+
$76.73000
500+
$75.9627
1000+
$75.1954
1500+
$74.4281
2000+
$73.6608
2500+
$72.8935
Exquisite packaging
Discount
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onsemi's NXH100B120H3Q0PTG IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 186 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM (55x32.5)