NXH35C120L2C2SG
onsemi
onsemi
IGBT MODULE, CIB 1200 V, 35 A IG
$106.60
Available to order
Reference Price (USD)
1+
$106.60000
500+
$105.534
1000+
$104.468
1500+
$103.402
2000+
$102.336
2500+
$101.27
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize efficiency in your power electronics with the NXH35C120L2C2SG IGBT Module by onsemi. Perfect for elevators and conveyor systems, it features low switching losses and high noise immunity. onsemi leads in innovation contact us for expert support and competitive pricing.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 8.33 nF @ 20 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
- Supplier Device Package: 26-DIP
Related Products
Microsemi Corporation
APTGL180A1202G
Infineon Technologies
FF200R33KF2CNOSA1
Microchip Technology
APT35GT120JU3
Infineon Technologies
FS50R12W2T4B11BOMA1
Microchip Technology
APTGT300DU170G
Microchip Technology
APTGT50A120T1G
Infineon Technologies
DF200R12PT4B6BOSA1
Infineon Technologies
FS150R12KT4B9BOSA1
Microchip Technology
APT70GR120JD60
Microchip Technology