NXH50M65L4C2ESG
onsemi
onsemi
650V 50A CONVERTER-INVERTER-PFCS
$82.83
Available to order
Reference Price (USD)
1+
$82.83000
500+
$82.0017
1000+
$81.1734
1500+
$80.3451
2000+
$79.5168
2500+
$78.6885
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi's NXH50M65L4C2ESG IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 2.608 nF @ 20 V
- Input: Single Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 27-PowerDIP Module (1.858", 47.20mm)
- Supplier Device Package: 27-DIP
Related Products
onsemi
NXH40T120L3Q1PTG
Infineon Technologies
FS100R12N2T4BDLA1
Microchip Technology
APTGT50TA60PG
Fairchild Semiconductor
HGT1N30N60A4D
IXYS
MIXA61WB1200TEH
Infineon Technologies
BSM35GD120DLCE3224BOSA1
Infineon Technologies
F4100R17ME4B11BPSA1
Infineon Technologies
FS25R12YT3BOMA1
Microchip Technology
APTGL90DA120T1G
Infineon Technologies