NXPSC126506Q
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$6.55
Available to order
Reference Price (USD)
1+
$6.55000
500+
$6.4845
1000+
$6.419
1500+
$6.3535
2000+
$6.288
2500+
$6.2225
Exquisite packaging
Discount
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Upgrade your electronic designs with WeEn Semiconductors's NXPSC126506Q Single Rectifier Diodes, engineered for precision and durability. Perfect for rectification circuits, these diodes offer fast switching, high efficiency, and minimal power loss. Applications span across automotive systems, renewable energy solutions, and telecommunications. Key features include high temperature tolerance, low leakage current, and superior surge protection. Trust WeEn Semiconductors for components that meet the highest industry standards. Ready to order? Submit your inquiry now!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 80 µA @ 650 V
- Capacitance @ Vr, F: 380pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 175°C (Max)
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