Shopping cart

Subtotal: $0.00

P3D06006E2

PN Junction Semiconductor
P3D06006E2 Preview
PN Junction Semiconductor
DIODE SCHOTTKY 600V 6A TO252-2
$2.50
Available to order
Reference Price (USD)
1+
$2.50000
500+
$2.475
1000+
$2.45
1500+
$2.425
2000+
$2.4
2500+
$2.375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 18A (DC)
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: TO-252-2
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C (TJ)

Related Products

Diodes Incorporated

B190B-13-F

Taiwan Semiconductor Corporation

S1G R3G

Diodes Incorporated

SDT10A45P5-7

Infineon Technologies

BAS40B5000

Central Semiconductor Corp

CMR3-06 BK PBFREE

Comchip Technology

CDSW4148-G

Global Power Technology-GPT

G3S06508H

Panjit International Inc.

BD5100S_S2_00001

Top