P3D12010G2
PN Junction Semiconductor
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 10A TO263-2
$6.54
Available to order
Reference Price (USD)
1+
$6.54000
500+
$6.4746
1000+
$6.4092
1500+
$6.3438
2000+
$6.2784
2500+
$6.213
Exquisite packaging
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Discover high-quality P3D12010G2 Single Rectifier Diodes from PN Junction Semiconductor, designed for efficient power conversion and reliable performance. These diodes are ideal for a wide range of applications, including power supplies, converters, and inverters. With robust construction and superior thermal management, they ensure long-lasting operation under demanding conditions. Features include low forward voltage drop, high surge current capability, and excellent reverse leakage characteristics. Whether for industrial or consumer electronics, PN Junction Semiconductor's P3D12010G2 delivers unmatched reliability. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 33A (DC)
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: TO-263-2
- Supplier Device Package: TO-263-2
- Operating Temperature - Junction: -55°C ~ 175°C (TJ)
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