P3M06120T3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 650V 29A TO-220-3
$9.05
Available to order
Reference Price (USD)
1+
$9.05000
500+
$8.9595
1000+
$8.869
1500+
$8.7785
2000+
$8.688
2500+
$8.5975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with P3M06120T3, a reliable Transistors - FETs, MOSFETs - Single by PN Junction Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, P3M06120T3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 29A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 153W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-2L
- Package / Case: TO-220-2
Related Products
STMicroelectronics
STL31N65M5
Renesas Electronics America Inc
NP50P03YDG-E1-AY
IXYS
IXFN32N120
STMicroelectronics
STU3N62K3
Nexperia USA Inc.
BUK9606-55A,118
Fairchild Semiconductor
HUF76137P3
Infineon Technologies
IRL3705NPBF
Fairchild Semiconductor
FDS8433A-G
STMicroelectronics
STF5N80K5
Nexperia USA Inc.