P3M171K2K3
PN Junction Semiconductor

PN Junction Semiconductor
SICFET N-CH 1700V 6A TO-247-3
$5.59
Available to order
Reference Price (USD)
1+
$5.59000
500+
$5.5341
1000+
$5.4782
1500+
$5.4223
2000+
$5.3664
2500+
$5.3105
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose P3M171K2K3 by PN Junction Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with P3M171K2K3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 68W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3L
- Package / Case: TO-247-3