P3M173K0T3
PN Junction Semiconductor

PN Junction Semiconductor
SICFET N-CH 1700V 4A TO-220-3
$5.08
Available to order
Reference Price (USD)
1+
$5.08000
500+
$5.0292
1000+
$4.9784
1500+
$4.9276
2000+
$4.8768
2500+
$4.826
Exquisite packaging
Discount
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Optimize your electronic systems with P3M173K0T3, a high-quality Transistors - FETs, MOSFETs - Single from PN Junction Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, P3M173K0T3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 2.6Ohm @ 0.6A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 0.6mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 75W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-2L
- Package / Case: TO-220-2