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P3M173K0T3

PN Junction Semiconductor
P3M173K0T3 Preview
PN Junction Semiconductor
SICFET N-CH 1700V 4A TO-220-3
$5.08
Available to order
Reference Price (USD)
1+
$5.08000
500+
$5.0292
1000+
$4.9784
1500+
$4.9276
2000+
$4.8768
2500+
$4.826
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Rds On (Max) @ Id, Vgs: 2.6Ohm @ 0.6A, 15V
  • Vgs(th) (Max) @ Id: 2.2V @ 0.6mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): +19V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 75W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-2L
  • Package / Case: TO-220-2

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