PBR941,215
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 10V 8GHZ TO236AB
$0.09
Available to order
Reference Price (USD)
3,000+
$0.14383
6,000+
$0.13626
15,000+
$0.12869
30,000+
$0.11961
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF designs with NXP USA Inc.'s PBR941,215 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how PBR941,215 can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
- Gain: -
- Power - Max: 360mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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