PBSS4130PAN,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS 2NPN 30V 1A 6HUSON
$0.50
Available to order
Reference Price (USD)
3,000+
$0.17442
6,000+
$0.16473
15,000+
$0.15989
Exquisite packaging
Discount
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Achieve peak performance with Nexperia USA Inc.'s PBSS4130PAN,115 BJT Arrays, crafted for precision and durability. These arrays feature high-speed operation, low thermal resistance, and excellent matching properties, ensuring consistent results in critical applications. Commonly utilized in data acquisition, telecommunications, and energy management systems. Contact us today to discuss your project requirements and discover how we can help you succeed!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 500mA, 2V
- Power - Max: 510mW
- Frequency - Transition: 165MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
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