PBSS4130QAZ
NXP Semiconductors
NXP Semiconductors
NEXPERIA PBSS4130QA - 30 V, 1 A
$0.06
Available to order
Reference Price (USD)
5,000+
$0.09282
Exquisite packaging
Discount
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Enhance your circuit designs with PBSS4130QAZ from NXP Semiconductors, a trusted name in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single are engineered for efficiency and durability, featuring fast switching speeds and robust construction. Ideal for use in audio amplifiers, signal processing, and more, PBSS4130QAZ ensures top-tier performance. Don't miss out on this exceptional component reach out to us today for more details and pricing.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
- Power - Max: 325 mW
- Frequency - Transition: 190MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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