PBSS4160PAN,115
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PBSS4160PAN - SMALL
$0.12
Available to order
Reference Price (USD)
3,000+
$0.17442
6,000+
$0.16473
15,000+
$0.15989
Exquisite packaging
Discount
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Enhance your electronic systems with NXP USA Inc.'s PBSS4160PAN,115 BJT Arrays, featuring advanced technology and robust performance. These arrays offer fast switching, high gain bandwidth, and excellent linearity, making them suitable for high-frequency and precision applications. Widely used in automotive electronics, industrial controls, and wearable devices. Ready to order? Request a quote or contact our support team for assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
- Power - Max: 510mW
- Frequency - Transition: 175MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
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