PBSS4160PANP,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN/PNP 60V 1A 6HUSON
$0.50
Available to order
Reference Price (USD)
3,000+
$0.17442
6,000+
$0.16473
15,000+
$0.15989
Exquisite packaging
Discount
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The PBSS4160PANP,115 Bipolar Junction Transistor Arrays from Nexperia USA Inc. are built for high-efficiency and long-lasting operation. Key benefits include matched transistor pairs, low distortion, and wide operating temperature range, ideal for RF and power amplification. Commonly found in broadcasting equipment, instrumentation, and security systems. Interested in learning more? Submit an inquiry and our experts will guide you through the selection process!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
- Power - Max: 510mW
- Frequency - Transition: 175MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
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