PBSS4230QAZ
NXP Semiconductors
NXP Semiconductors
NEXPERIA PBSS4230QA - 30V, 2A NP
$0.07
Available to order
Reference Price (USD)
5,000+
$0.10160
Exquisite packaging
Discount
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Upgrade your electronic projects with PBSS4230QAZ by NXP Semiconductors, a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, PBSS4230QAZ provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the NXP Semiconductors difference.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 325 mW
- Frequency - Transition: 190MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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