PBSS5260QAZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 60V 1.7A DFN1010D-3
$0.37
Available to order
Reference Price (USD)
5,000+
$0.08857
10,000+
$0.08076
25,000+
$0.07555
50,000+
$0.07294
Exquisite packaging
Discount
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Experience superior performance with PBSS5260QAZ from Nexperia USA Inc., a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, PBSS5260QAZ is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.7 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
- Power - Max: 325 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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