PBSS5612PA,115
NXP Semiconductors
NXP Semiconductors
NEXPERIA PBSS5612PA - SMALL SIGN
$0.10
Available to order
Reference Price (USD)
3,000+
$0.14520
6,000+
$0.13640
15,000+
$0.12760
30,000+
$0.12320
Exquisite packaging
Discount
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Choose PBSS5612PA,115 by NXP Semiconductors for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, PBSS5612PA,115 is a versatile solution. Ready to order? Submit your inquiry today and let NXP Semiconductors provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 6A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V
- Power - Max: 2.1 W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-PowerUDFN
- Supplier Device Package: 3-HUSON (2x2)
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